Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

Part NumberSIJ482DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIJ482DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ482DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ482DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ482DP-T1-GE3.
We are offering SIJ482DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ482DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ482DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 40V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 69.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ482DP-T1-GE3 - Related Products

	NX7002AKW,115	Nexperia USA Inc., N-Channel 60V 170mA (Ta) 220mW (Ta), 1.06W (Tc) Surface Mount SC-70,	View
	IXTK110N20L2	IXYS, N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™	View
	FDMS7650DC	ON Semiconductor, N-Channel 30V 47A (Ta), 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®	View
	STD5N20LT4	STMicroelectronics, N-Channel 200V 5A (Tc) 33W (Tc) Surface Mount DPAK, STripFET™	View
	IPA50R250CPXKSA1	Infineon Technologies, N-Channel 500V 13A (Tc) 33W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	RSJ400N10TL	Rohm Semiconductor, N-Channel 100V 40A (Tc) 1.35W (Ta), 50W (Tc) Surface Mount LPTS (SC-83),	View
	IRFI830GPBF	Vishay Siliconix, N-Channel 500V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3,	View
	FDP090N10	ON Semiconductor, N-Channel 100V 75A (Tc) 208W (Tc) Through Hole TO-220-3, PowerTrench®	View
	NTP082N65S3F	ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3, FRFET®, SuperFET® II	View
	STL60N10F7	STMicroelectronics, N-Channel 100V 46A (Tc) 5W (Ta), 72W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	BUK9Y12-100E,115	Nexperia USA Inc., N-Channel 100V 85A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	SI7456CDP-T1-GE3	Vishay Siliconix, N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIJ482DP-T1-GE3 - Tags

SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 PDF SIJ482DP-T1-GE3 datasheet SIJ482DP-T1-GE3 specification SIJ482DP-T1-GE3 image SIJ482DP-T1-GE3 India Renesas Electronics India SIJ482DP-T1-GE3 buy SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 price SIJ482DP-T1-GE3 distributor SIJ482DP-T1-GE3 supplier SIJ482DP-T1-GE3 wholesales