Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR108DP-T1-RE3

SIR108DP-T1-RE3

SIR108DP-T1-RE3

Part NumberSIR108DP-T1-RE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V POWERPAK SO-8

DatasheetSIR108DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 12.4A (Ta), 45A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR108DP-T1-RE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR108DP-T1-RE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR108DP-T1-RE3.
We are offering SIR108DP-T1-RE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR108DP-T1-RE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR108DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2060pF @ 50V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR108DP-T1-RE3 - Related Products

	BSZ0904NSIATMA1	Infineon Technologies, N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 37W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	STF25N10F7	STMicroelectronics, N-Channel 100V 19A (Tc) 25W (Tc) Through Hole TO-220FP, DeepGATE™, STripFET™ VII	View
	CSD16556Q5B	Texas Instruments, N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	TSM038N03PQ33 RGG	Taiwan Semiconductor Corporation, N-Channel 30V 78A (Tc) 39W (Tc) Surface Mount 8-PDFN (3x3),	View
	TK7P65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 6.8A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV	View
	BUK7620-100A,118	Nexperia USA Inc., N-Channel 100V 63A (Tc) 200W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	RS1E350BNTB	Rohm Semiconductor, N-Channel 30V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP,	View
	DMTH4004LK3Q-13	Diodes Incorporated, N-Channel 40V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	SIHP21N80AE-GE3	Vishay Siliconix, N-Channel 800V 17.4A (Tc) 32W (Tc) Through Hole TO-220AB,	View
	BSS123-TP	Micro Commercial Co, N-Channel 100V 170mA 350mW Surface Mount SOT-23,	View
	STD60N55F3	STMicroelectronics, N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	PSMN7R6-60BS,118	Nexperia USA Inc., N-Channel 60V 92A (Tc) 149W (Tc) Surface Mount D2PAK,	View

SIR108DP-T1-RE3 - Tags

SIR108DP-T1-RE3 SIR108DP-T1-RE3 PDF SIR108DP-T1-RE3 datasheet SIR108DP-T1-RE3 specification SIR108DP-T1-RE3 image SIR108DP-T1-RE3 India Renesas Electronics India SIR108DP-T1-RE3 buy SIR108DP-T1-RE3 SIR108DP-T1-RE3 price SIR108DP-T1-RE3 distributor SIR108DP-T1-RE3 supplier SIR108DP-T1-RE3 wholesales