SIR158DP-T1-GE3
SIR158DP-T1-GE3
Part Number SIR158DP-T1-GE3 Description MOSFET N-CH 30V 60A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR158DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR158DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR158DP-T1-GE3.
We are offering SIR158DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR158DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR158DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4980pF @ 15V FET Feature - Power Dissipation (Max) 5.4W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR158DP-T1-GE3 - Related ProductsMore >>
STW20NM60 STMicroelectronics, N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-247-3, MDmesh™
View
FQU4N50TU-WS ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®
View
IXTK200N10L2 IXYS, N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole TO-264 (IXTK), Linear L2™
View
IPC50N04S55R8ATMA1 Infineon Technologies, N-Channel 40V 50A (Tc) 42W (Tc) Surface Mount PG-TDSON-8-33, OptiMOS™
View
SIR626DP-T1-RE3 Vishay Siliconix, N-Channel 60V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IRFR024NTRLPBF Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®
View
IRLR3110ZTRPBF Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
View
FDD5N60NZTM ON Semiconductor, N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount D-Pak, UniFET-II™
View
BSZ060NE2LSATMA1 Infineon Technologies, N-Channel 25V 12A (Ta), 40A (Tc) 2.1W (Ta), 26W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
FDD5N50TM-WS ON Semiconductor, N-Channel 500V 4A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™
View
TK9J90E,S1E Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N),
View
IXFB40N110Q3 IXYS, N-Channel 1100V 40A (Tc) 1560W (Tc) Through Hole PLUS264™, HiPerFET™
View
SIR158DP-T1-GE3 - Tags
English
