Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR804DP-T1-GE3

SIR804DP-T1-GE3

SIR804DP-T1-GE3

Part NumberSIR804DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSIR804DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR804DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR804DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR804DP-T1-GE3.
We are offering SIR804DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR804DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR804DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2450pF @ 50V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR804DP-T1-GE3 - Related Products

	SQM35N30-97_GE3	Vishay Siliconix, N-Channel 300V 35A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	IXTH1N450HV	IXYS, N-Channel 4500V 1A (Tc) 520W (Tc) Through Hole TO-247HV,	View
	AUIRF1324WL	Infineon Technologies, N-Channel 24V 240A (Tc) 300W (Tc) Through Hole TO-262-3 Wide, HEXFET®	View
	PMV230ENEAR	Nexperia USA Inc., N-Channel 60V 1.5A (Ta) 480mW (Ta), 1.45W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	2N7000-D74Z	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	TSM3N80CZ C0G	Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Through Hole TO-220,	View
	NVD5C688NLT4G	ON Semiconductor, N-Channel 60V 17A (Tc) 18W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	IPB60R120C7ATMA1	Infineon Technologies, N-Channel 650V 19A (Tc) 92W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7	View
	STW50N65DM2AG	STMicroelectronics, N-Channel 650V 28A (Tc) 300W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2	View
	STB80NF03L-04T4	STMicroelectronics, N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	IXFT32N100XHV	IXYS, N-Channel 1000V 32A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT), HiPerFET™	View
	SI1012X-T1-GE3	Vishay Siliconix, N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3, TrenchFET®	View

SIR804DP-T1-GE3 - Tags

SIR804DP-T1-GE3 SIR804DP-T1-GE3 PDF SIR804DP-T1-GE3 datasheet SIR804DP-T1-GE3 specification SIR804DP-T1-GE3 image SIR804DP-T1-GE3 India Renesas Electronics India SIR804DP-T1-GE3 buy SIR804DP-T1-GE3 SIR804DP-T1-GE3 price SIR804DP-T1-GE3 distributor SIR804DP-T1-GE3 supplier SIR804DP-T1-GE3 wholesales