SIR872DP-T1-GE3
SIR872DP-T1-GE3
Part Number SIR872DP-T1-GE3 Description MOSFET N-CH 150V 53.7A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIR872DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR872DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR872DP-T1-GE3.
We are offering SIR872DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIR872DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIR872DP-T1-GE3 Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 75V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIR872DP-T1-GE3 - Related ProductsMore >>
IRFS3806TRLPBF Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D2PAK, HEXFET®
View
SISA18ADN-T1-GE3 Vishay Siliconix, N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SI7454DP-T1-E3 Vishay Siliconix, N-Channel 100V 5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
BSS159NH6906XTSA1 Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
FQU2N100TU ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK, QFET®
View
R6012FNJTL Rohm Semiconductor, N-Channel 600V 12A (Tc) 50W (Tc) Surface Mount LPTS (SC-83),
View
FDPF5N50T ON Semiconductor, N-Channel 500V 5A (Tc) 28W (Tc) Through Hole TO-220F, UniFET™
View
TK25E60X,S1X Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV-H
View
IRFBF20SPBF Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D2PAK,
View
IRFBC40ASPBF Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D2PAK,
View
SQM200N04-1M7L_GE3 Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®
View
SQP120N06-6M7_GE3 Vishay Siliconix, Through Hole TO-220AB,
View
SIR872DP-T1-GE3 - Tags
English
