SISH434DN-T1-GE3
SISH434DN-T1-GE3
Part Number SISH434DN-T1-GE3 Description MOSFET N-CHAN 40V PPAK 1212-8SH Package / Case PowerPAK® 1212-8SHUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
To learn about the specification of SISH434DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH434DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH434DN-T1-GE3.
We are offering SISH434DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISH434DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISH434DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 17.6A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.6mOhm @ 16.2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 20V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8SH Package / Case PowerPAK® 1212-8SH
SISH434DN-T1-GE3 - Related ProductsMore >>
DMN3021LFDF-7 Diodes Incorporated, N-Channel 30V 11.8A (Ta) 2.03W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
IRFB4110GPBF Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
View
SIHG16N50C-E3 Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-247AC,
View
FQA32N20C ON Semiconductor, N-Channel 200V 32A (Tc) 204W (Tc) Through Hole TO-3PN, QFET®
View
NDT3055 ON Semiconductor, N-Channel 60V 4A (Ta) 3W (Ta) Surface Mount SOT-223-4,
View
IXFH34N65X2 IXYS, N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247, HiPerFET™
View
SI4100DY-T1-GE3 Vishay Siliconix, N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
RS1P600BETB1 Rohm Semiconductor, N-Channel 100V 17.5A (Ta), 60A (Tc) 3W (Ta), 35W (Tc) Surface Mount 8-HSOP,
View
R6030ENZC8 Rohm Semiconductor, N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-3PF,
View
DMN61D9UW-7 Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
View
STFU18N65M2 STMicroelectronics, N-Channel 650V 12A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
View
TSM2318CX RFG Taiwan Semiconductor Corporation, N-Channel 40V 3.9A (Ta) 1.25W (Ta) Surface Mount SOT-23,
View
SISH434DN-T1-GE3 - Tags
English
