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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2318AES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 10V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
IRF8302MTRPBF
Infineon Technologies, N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
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DMN1054UCB4-7
Diodes Incorporated, N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1-WLB0808-4,
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SIHG22N60E-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC,
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DMN2046U-7
Diodes Incorporated, N-Channel 20V 3.4A (Ta) 760mW (Ta) Surface Mount SOT-23,
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MMBF0201NLT1G
ON Semiconductor, N-Channel 20V 300mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
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IRFS9N60ATRLPBF
Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,
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IPA65R600E6XKSA1
Infineon Technologies, N-Channel 650V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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SIS406DN-T1-GE3
Vishay Siliconix, N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IRFZ20PBF
Vishay Siliconix, N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-220AB,
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STD8NF25
STMicroelectronics, N-Channel 250V 8A (Tc) 72W (Tc) Surface Mount DPAK, STripFET™ II
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BSZ097N10NS5ATMA1
Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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NTPF082N65S3F
ON Semiconductor, N-Channel 650V 40A (Tc) 48W (Tc) Through Hole TO-220F, SuperFET® III
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