Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

Part NumberSQ2318AES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 40V SOT23

DatasheetSQ2318AES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SQ2318AES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2318AES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2318AES-T1_GE3.
We are offering SQ2318AES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2318AES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2318AES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2318AES-T1_GE3 - Related Products

	NTMFS4C250NT1G	ON Semiconductor, N-Channel 30V 11A (Ta), 69A (Tc) 770mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IXFX21N100F	IXYS-RF, N-Channel 1000V 21A (Tc) 500W (Tc) Through Hole PLUS247™-3, HiPerRF™	View
	PSMN6R0-30YLB,115	Nexperia USA Inc., N-Channel 30V 71A (Tc) 58W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRLL2703TRPBF	Infineon Technologies, N-Channel 30V 3.9A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	RCX080N25	Rohm Semiconductor, N-Channel 250V 8A (Tc) 2.23W (Ta), 35W (Tc) Through Hole TO-220FM,	View
	TN2106N3-G	Microchip Technology, N-Channel 60V 300mA (Tj) 740mW (Tc) Through Hole TO-92-3,	View
	TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
	CSD18537NQ5AT	Texas Instruments, N-Channel 60V 50A (Ta) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFS11N50ATRRP	Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,	View
	IPB60R280P7ATMA1	Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	SQM100N10-10_GE3	Vishay Siliconix, N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), Automotive, AEC-Q101, TrenchFET®	View
	IPB011N04LGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View

SQ2318AES-T1_GE3 - Tags

SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 PDF SQ2318AES-T1_GE3 datasheet SQ2318AES-T1_GE3 specification SQ2318AES-T1_GE3 image SQ2318AES-T1_GE3 India Renesas Electronics India SQ2318AES-T1_GE3 buy SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 price SQ2318AES-T1_GE3 distributor SQ2318AES-T1_GE3 supplier SQ2318AES-T1_GE3 wholesales