SQJ481EP-T1_GE3
SQJ481EP-T1_GE3
Part Number SQJ481EP-T1_GE3
Description MOSFET P-CHAN 80V POWERPAK SO-8L
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 80V 16A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SQJ481EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ481EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ481EP-T1_GE3.
We are offering SQJ481EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQJ481EP-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQJ481EP
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case 8-PowerTDFN
SQJ481EP-T1_GE3 - Related ProductsMore >>
NTF6P02T3G
ON Semiconductor, P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223,
View
MTM231232LBF
Panasonic Electronic Components, P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SMini3-G1-B,
View
SQS415ENW-T1_GE3
Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W, Automotive, AEC-Q101, TrenchFET®
View
VP2110K1-G
Microchip Technology, P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
SI1077X-T1-GE3
Vishay Siliconix, P-Channel 20V 330mW (Ta) Surface Mount SC-89-6, TrenchFET®
View
SSM3J140TU,LF
Toshiba Semiconductor and Storage, P-Channel 20V 4.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
ATP103-TL-H
ON Semiconductor, P-Channel 30V 55A (Ta) 50W (Tc) Surface Mount ATPAK,
View
MCQ4953-TP
Micro Commercial Co, P-Channel 30V 5.1A 2.5W Surface Mount 8-SOP,
View
FDS6681Z
ON Semiconductor, P-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SSM6J501NU,LF
Toshiba Semiconductor and Storage, P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
View
DMP3017SFGQ-7
Diodes Incorporated, P-Channel 30V 11.5A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,
View
IRLML6401TRPBF
Infineon Technologies, P-Channel 12V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SQJ481EP-T1_GE3 - Tags