SQM10250E_GE3

Part NumberSQM10250E_GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQM10250E
Standard Package	800
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4050pF @ 25V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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SIAA00DJ-T1-GE3	Vishay Siliconix, N-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV	View
DMN2005UFG-13	Diodes Incorporated, N-Channel 20V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8,	View
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STB130N6F7	STMicroelectronics, N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D2PAK, STripFET™ F7	View
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