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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM90142E
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFR3410TRPBF
Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak, HEXFET®
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PSMN8R3-40YS,115
Nexperia USA Inc., N-Channel 40V 70A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,
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SIHG47N60E-GE3
Vishay Siliconix, N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC,
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SI7322ADN-T1-GE3
Vishay Siliconix, N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®
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IXFH14N85X
IXYS, N-Channel 850V 14A (Tc) 460W (Tc) Through Hole TO-247-3, HiPerFET™
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IRFB7537PBF
Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
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SI7636DP-T1-E3
Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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STI6N62K3
STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I2PAK, SuperMESH3™
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RCJ220N25TL
Rohm Semiconductor, N-Channel 250V 22A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),
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IRF5802TRPBF
Infineon Technologies, N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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FDB2552
ON Semiconductor, N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB, PowerTrench®
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CSD18536KTTT
Texas Instruments, N-Channel 60V 200A (Ta), 349A (Tc) 375W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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