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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB140NF55(-1), STP140NF55
Standard Package 1000
Manufacturer STMicroelectronics
Series STripFET™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFL4310TRPBF
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STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ F7
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SI1012CR-T1-GE3
Vishay Siliconix, N-Channel 20V 240mW (Ta) Surface Mount SC-75A, TrenchFET®
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SIJ186DP-T1-GE3
Vishay Siliconix, N-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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CSD19505KTT
Texas Instruments, N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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SQP120N06-06_GE3
Vishay Siliconix, N-Channel 60V 119A (Tc) 175W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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SIS108DN-T1-GE3
Vishay Siliconix, N-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV
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TK32A12N1,S4X
Toshiba Semiconductor and Storage, N-Channel 120V 32A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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SISA72ADN-T1-GE3
Vishay Siliconix, N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV
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STB30NF10T4
STMicroelectronics, N-Channel 100V 35A (Tc) 115W (Tc) Surface Mount D2PAK, STripFET™ II
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IRF2807ZSTRLPBF
Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
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