Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGW(A)8M120DF3 Datasheet
Standard Package	30
Manufacturer	STMicroelectronics
Series	M
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	16A
Current - Collector Pulsed (Icm)	32A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 8A
Power - Max	167W
Switching Energy	390µJ (on), 370µJ (Off)
Input Type	Standard
Gate Charge	32nC
Td (on/off) @ 25°C	20ns/126ns
Test Condition	600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr)	103ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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STGP30M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 60A 258W Through Hole TO-220,	View
STGWA25M120DF3	STMicroelectronics, IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247 Long Leads,	View
IXYN50N170CV1	IXYS, IGBT 1700V 120A 880W Chassis Mount SOT-227B, XPT™	View
FGH40T70SHD-F155	ON Semiconductor, IGBT Trench Field Stop 700V 80A 268W Through Hole TO-247-3,	View
HGTG40N60A4	ON Semiconductor, IGBT 600V 75A 625W Through Hole TO-247-3,	View
IRGP4660DPBF	Infineon Technologies, IGBT 600V 100A 330W Through Hole TO-247AC,	View
IXBT42N170	IXYS, IGBT 1700V 80A 360W Surface Mount TO-268, BIMOSFET™	View
STGD6M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 12A 88W Surface Mount DPAK,	View

STGW8M120DF3

Part NumberSTGW8M120DF3