STGYA120M65DF2
STGYA120M65DF2
Part Number STGYA120M65DF2 Description TRENCH GATE FIELD-STOP IGBT, M S Package / Case TO-247-3 Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™
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STGYA120M65DF2 - Product Attributes
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Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet STGYA120M65DF2 Datasheet Standard Package 600 Manufacturer STMicroelectronics Series * Packaging Tube Part Status Active IGBT Type NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 360A Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A Power - Max 625W Switching Energy 1.8mJ (on), 4.41mJ (off) Input Type Standard Gate Charge 420nC Td (on/off) @ 25°C 66ns/185ns Test Condition 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr) 202ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Exposed Pad Supplier Device Package MAX247™
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