STU9HN65M2
STU9HN65M2
Part Number STU9HN65M2
Description MOSFET N-CH 650V 5.5A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 5.5A (Tc) 60W (Tc) Through Hole I-PAK
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STU9HN65M2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STU9HN65M2
Standard Package 75
Manufacturer STMicroelectronics
Series MDmesh™ M2
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 820mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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