TK25E60X,S1X
TK25E60X,S1X
Part Number TK25E60X,S1X Description MOSFET N-CH 600V 25A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220
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TK25E60X,S1X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK25E60X Standard Package 50 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV-H Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 300V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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