TK8Q65W,S1Q
TK8Q65W,S1Q
Part Number TK8Q65W,S1Q Description MOSFET N-CH 650V 7.8A IPAK Package / Case TO-251-3 Stub Leads, IPakUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK
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TK8Q65W,S1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK8Q65W Standard Package 75 Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 670mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 300V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak
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