TP65H035WS
TP65H035WS
Part Number TP65H035WS
Description GANFET N-CH 650V 46.5A TO247-3
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
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TP65H035WS - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TP65H035WS
Standard Package 30
Manufacturer Transphorm
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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