TPH2R506PL,L1Q
TPH2R506PL,L1Q
Part Number TPH2R506PL,L1Q Description X35 PB-F POWER MOSFET TRANSISTOR Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5)
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TPH2R506PL,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH2R506PL Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V FET Feature - Power Dissipation (Max) 132W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN
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