TPN4R712MD,L1Q
TPN4R712MD,L1Q
Part Number TPN4R712MD,L1Q Description MOSFET P-CH 20V 36A 8TSON ADV Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
TPN4R712MD,L1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPN4R712MD Standard Package 5000 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance (3.3x3.3) Package / Case 8-PowerVDFN
TPN4R712MD,L1Q - Related ProductsMore >>
SI7101DN-T1-GE3 Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
ZXMP10A18GTA Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,
View
RAF040P01TCL Rohm Semiconductor, P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
RTQ040P02TR Rohm Semiconductor, P-Channel 20V 4A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),
View
SI4459ADY-T1-GE3 Vishay Siliconix, P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
SQJ463EP-T1_GE3 Vishay Siliconix, P-Channel 40V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
IRLML6302TRPBF Infineon Technologies, P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
DMG2301L-7 Diodes Incorporated, P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount SOT-23,
View
PMV32UP,215 Nexperia USA Inc., P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB,
View
DMP32D4SFB-7B Diodes Incorporated, P-Channel 30V 400mA (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
IRF4905STRLPBF Infineon Technologies, P-Channel 55V 42A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
View
IRF6216TRPBF Infineon Technologies, P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
TPN4R712MD,L1Q - Tags
TPN4R712MD,L1Q
TPN4R712MD,L1Q PDF
TPN4R712MD,L1Q datasheet
TPN4R712MD,L1Q specification
TPN4R712MD,L1Q image
TPN4R712MD,L1Q India
Renesas Electronics India TPN4R712MD,L1Q
buy TPN4R712MD,L1Q
TPN4R712MD,L1Q price
TPN4R712MD,L1Q distributor
TPN4R712MD,L1Q supplier
TPN4R712MD,L1Q wholesales
English
