TPN4R712MD,L1Q


TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPN4R712MD,L1Q - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package5000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs65nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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TPN4R712MD,L1Q - Tags

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