Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN4R712MD,L1Q

TPN4R712MD,L1Q

TPN4R712MD,L1Q

Part NumberTPN4R712MD,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 20V 36A 8TSON ADV

DatasheetTPN4R712MD

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN4R712MD,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN4R712MD,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN4R712MD,L1Q.
We are offering TPN4R712MD,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN4R712MD,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN4R712MD
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN4R712MD,L1Q - Related Products

	SIS413DN-T1-GE3	Vishay Siliconix, P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	NTB5605PT4G	ON Semiconductor, P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D2PAK,	View
	CSD25310Q2	Texas Instruments, P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2), NexFET™	View
	RQ6C065BCTCR	Rohm Semiconductor, P-Channel 20V 6.5A (Tc) 1.25W (Tc) Surface Mount TSMT6 (SC-95),	View
	IRF9317TRPBF	Infineon Technologies, P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	CSD25202W15	Texas Instruments, P-Channel 20V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA, NexFET™	View
	NVR1P02T1G	ON Semiconductor, P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3,	View
	SQJ411EP-T1_GE3	Vishay Siliconix, P-Channel 12V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SUM110P04-04L-E3	Vishay Siliconix, P-Channel 40V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	TSM2323CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	TSM150P04LCS RLG	Taiwan Semiconductor Corporation, P-Channel 40V 22A (Tc) 12.5W (Tc) Surface Mount 8-SOP,	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View

TPN4R712MD,L1Q - Tags

TPN4R712MD,L1Q TPN4R712MD,L1Q PDF TPN4R712MD,L1Q datasheet TPN4R712MD,L1Q specification TPN4R712MD,L1Q image TPN4R712MD,L1Q India Renesas Electronics India TPN4R712MD,L1Q buy TPN4R712MD,L1Q TPN4R712MD,L1Q price TPN4R712MD,L1Q distributor TPN4R712MD,L1Q supplier TPN4R712MD,L1Q wholesales