Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

Part NumberTPW4R50ANH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 100V 92A 8DSOP

DatasheetTPW4R50ANH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW4R50ANH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW4R50ANH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW4R50ANH,L1Q.
We are offering TPW4R50ANH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW4R50ANH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW4R50ANH
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 50V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW4R50ANH,L1Q - Related Products

	BSZ075N08NS5ATMA1	Infineon Technologies, N-Channel 80V 40A (Tc) 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SQD100N03-3M2L_GE3	Vishay Siliconix, N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	IXTP08N50D2	IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Through Hole TO-220AB,	View
	STB45N40DM2AG	STMicroelectronics, N-Channel 400V 38A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ DM2	View
	SI7326DN-T1-GE3	Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FQP4N80	ON Semiconductor, N-Channel 800V 3.9A (Tc) 130W (Tc) Through Hole TO-220-3, QFET®	View
	ZVN3310FTA	Diodes Incorporated, N-Channel 100V 100mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	IXFK90N20	IXYS, N-Channel 200V 90A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	IXFQ30N60X	IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™	View
	TK31N60X,S1F	Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-247, DTMOSIV-H	View
	SIHP4N80E-GE3	Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB,	View
	IRFS9N60ATRLPBF	Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,	View

TPW4R50ANH,L1Q - Tags

TPW4R50ANH,L1Q TPW4R50ANH,L1Q PDF TPW4R50ANH,L1Q datasheet TPW4R50ANH,L1Q specification TPW4R50ANH,L1Q image TPW4R50ANH,L1Q India Renesas Electronics India TPW4R50ANH,L1Q buy TPW4R50ANH,L1Q TPW4R50ANH,L1Q price TPW4R50ANH,L1Q distributor TPW4R50ANH,L1Q supplier TPW4R50ANH,L1Q wholesales