Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TSM80N1R2CI C0G

TSM80N1R2CI C0G

TSM80N1R2CI C0G

Part NumberTSM80N1R2CI C0G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 800V 5.5A ITO220

DatasheetTSM80N1R2CI

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.5A (Tc) 25W (Tc) Through Hole ITO-220AB

To learn about the specification of TSM80N1R2CI C0G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM80N1R2CI C0G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM80N1R2CI C0G.
We are offering TSM80N1R2CI C0G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TSM80N1R2CI C0G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM80N1R2CI
Standard Package	1000
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.4nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	685pF @ 100V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab

TSM80N1R2CI C0G - Related Products

	IRL540STRLPBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	ZVN3320FTA	Diodes Incorporated, N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	STP110N10F7	STMicroelectronics, N-Channel 100V 110A (Tc) 150W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	FDD9409L-F085	ON Semiconductor, N-Channel 40V 90A (Tc) 150W (Tj) Surface Mount TO-252, (D-Pak), PowerTrench®	View
	FDMC86102LZ	ON Semiconductor, N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SI3424BDV-T1-GE3	Vishay Siliconix, N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	IRFL210TRPBF	Vishay Siliconix, N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	SI2312CDS-T1-GE3	Vishay Siliconix, N-Channel 20V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPB054N08N3GATMA1	Infineon Technologies, N-Channel 80V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FQP14N30	ON Semiconductor, N-Channel 300V 14.4A (Tc) 147W (Tc) Through Hole TO-220-3, QFET®	View
	IPAW60R360P7SXKSA1	Infineon Technologies, N-Channel 650V 9A (Tc) 22W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	NTLUS030N03CTAG	ON Semiconductor, N-Channel 30V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™	View

TSM80N1R2CI C0G - Tags

TSM80N1R2CI C0G TSM80N1R2CI C0G PDF TSM80N1R2CI C0G datasheet TSM80N1R2CI C0G specification TSM80N1R2CI C0G image TSM80N1R2CI C0G India Renesas Electronics India TSM80N1R2CI C0G buy TSM80N1R2CI C0G TSM80N1R2CI C0G price TSM80N1R2CI C0G distributor TSM80N1R2CI C0G supplier TSM80N1R2CI C0G wholesales