Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC2714
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Gain	23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
BFP740ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 45GHz 160mW Surface Mount SOT-343,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
BFP520FH6327XTSA1	Infineon Technologies, RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mount 4-TSFP,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFP540ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
BFQ19SH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 120mA 5.5GHz 1W Surface Mount SOT-89-3,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View
BFR193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-23-3,	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View

2SC2714-Y(TE85L,F)

Part Number2SC2714-Y(TE85L,F)