Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFX89, BFY90
Standard Package	2000
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.4GHz
Noise Figure (dB Typ @ f)	5.5dB @ 800MHz
Gain	23dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 25mA, 1V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
BFR181E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-23-3,	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
BFP540FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount 4-TSFP,	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
2N5770	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
BFP650FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 42GHz 500mW Surface Mount 4-TSFP,	View
BFP420FH6327XTSA1	Infineon Technologies, RF Transistor NPN 5.5V 35mA 25GHz 160mW Surface Mount 4-TSFP,	View
BFR183E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount SOT-23-3,	View

BFY90

Part NumberBFY90