Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5085
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB ~ 16.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

ON5088,115	NXP USA Inc., RF Transistor NPN 10V 40mA 55GHz 136mW Surface Mount 4-DFP,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFP740ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 45GHz 160mW Surface Mount SOT-343,	View
BFU610F,115	NXP USA Inc., RF Transistor NPN 5.5V 10mA 15GHz 136mW Surface Mount 4-DFP,	View
BFR181WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT323-3,	View
BFU590GX	NXP USA Inc., RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SOT-223,	View
BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFG35,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-223,	View
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View

2SC5085-Y(TE85L,F)

Part Number2SC5085-Y(TE85L,F)