2SJ649-AZ
2SJ649-AZ
Part Number 2SJ649-AZ Description MOSFET P-CH 60V 20A TO-220 Package / Case TO-220-3 Isolated TabUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab
To learn about the specification of 2SJ649-AZ, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2SJ649-AZ with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2SJ649-AZ.
We are offering 2SJ649-AZ for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
2SJ649-AZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2SJ649 Standard Package 25 Manufacturer Renesas Electronics America Series - Packaging Bulk Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta), 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Isolated Tab Package / Case TO-220-3 Isolated Tab
2SJ649-AZ - Related ProductsMore >>
NTK3139PT5G ON Semiconductor, P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723,
View
SIS407DN-T1-GE3 Vishay Siliconix, P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
TSM2307CX RFG Taiwan Semiconductor Corporation, P-Channel 30V 3A (Tc) 1.25W (Ta) Surface Mount SOT-23,
View
DMP4015SSSQ-13 Diodes Incorporated, P-Channel 40V 9.1A (Ta) 1.45W (Ta) Surface Mount 8-SO,
View
SI3493DDV-T1-GE3 Vishay Siliconix, P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
IRLML5203TRPBF Infineon Technologies, P-Channel 30V 3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SSM3J143TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
NTD20P06LT4G ON Semiconductor, P-Channel 60V 15.5A (Ta) 65W (Tc) Surface Mount DPAK,
View
SI3473CDV-T1-E3 Vishay Siliconix, P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SI7139DP-T1-GE3 Vishay Siliconix, P-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
ZXMP10A18GTA Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,
View
DMP45H21DHE-13 Diodes Incorporated, P-Channel 450V 600mA (Tc) 12.5W (Tc) Surface Mount SOT-223,
View
2SJ649-AZ - Tags
English
