Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU530X
Standard Package	3000
Manufacturer	NXP USA Inc.
Series	Automotive, AEC-Q101
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	11GHz
Noise Figure (dB Typ @ f)	0.7dB @ 900MHz
Gain	22dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 8V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143B
Base Part Number	BFU530

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2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
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BFT25,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 2.3GHz 30mW Surface Mount TO-236AB (SOT23),	View
BFR380L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 9V 80mA 14GHz 380mW Surface Mount PG-TSLP-3-1,	View
2N5770	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 900MHz 625mW Through Hole TO-92,	View
BFU530R	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
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KSC1674YBU	ON Semiconductor, RF Transistor NPN 20V 20mA 600MHz 250mW Through Hole TO-92-3,	View

BFU530XAR

Part NumberBFU530XAR