Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU660F
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	21GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain	12dB ~ 21dB
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 10mA, 2V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU660

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BFU660F,115

Part NumberBFU660F,115