Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU660F
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	21GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain	12dB ~ 21dB
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 10mA, 2V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU660

BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
MCH4020-TL-H	ON Semiconductor, RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mount 4-MCPH,	View
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFP843H6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343,	View
PH2729-25M	M/A-Com Technology Solutions, RF Transistor NPN 60V 4A 70W Chassis Mount,	View
BFP183WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 65mA 8.5GHz 450mW Surface Mount PG-SOT343-4,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
CPH6003A-TL-E	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH,	View

BFU660F,115

Part NumberBFU660F,115