BSS123LT1G
BSS123LT1G
Part Number BSS123LT1G
Description MOSFET N-CH 100V 170MA SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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BSS123LT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS123LT1 Datasheet
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
FET Feature -
Power Dissipation (Max) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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