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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK664R4-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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FDB2552-F085
ON Semiconductor, N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®
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IRF640PBF
Vishay Siliconix, N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB,
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Taiwan Semiconductor Corporation, N-Channel 900V 2.5A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak),
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ON Semiconductor, N-Channel 100V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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ON Semiconductor, N-Channel 60V 20A (Tc) 36W (Tc) Surface Mount DPAK,
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Vishay Siliconix, N-Channel 600V 16A (Tc) 147W (Tc) Surface Mount PowerPAK® 8 x 8,
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IXFH120N30X3
IXYS, N-Channel 300V 120A (Tc) 735W (Tc) Through Hole TO-247, HiPerFET™
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