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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R1-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8920pF @ 25V
FET Feature -
Power Dissipation (Max) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 4500V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™,
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IRF7759L2TRPBF
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IRLML6346TRPBF
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IRFP054NPBF
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IRFL4105TRPBF
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HAT2160H-EL-E
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ON Semiconductor, N-Channel 80V 24A (Ta), 76A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®
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Central Semiconductor Corp, N-Channel 800V 3A (Tc) 80W (Tc) Surface Mount DPAK,
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IRL1404ZSTRLPBF
Infineon Technologies, N-Channel 40V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
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IPB160N04S4H1ATMA1
Infineon Technologies, N-Channel 40V 160A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
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