DMN90H2D2HCTI
DMN90H2D2HCTI
Part Number DMN90H2D2HCTI
Description MOSFET N-CH 900V 6A ITO220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 900V 6A (Tc) 40W (Tc) Through Hole ITO-220AB
To learn about the specification of DMN90H2D2HCTI, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DMN90H2D2HCTI with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of DMN90H2D2HCTI.
We are offering DMN90H2D2HCTI for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
DMN90H2D2HCTI - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN90H2D2HCTI
Standard Package 50
Manufacturer Diodes Incorporated
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20.3nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1487pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab
DMN90H2D2HCTI - Related ProductsMore >>
IRL3803STRLPBF
Infineon Technologies, N-Channel 30V 140A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®
View
TSM60N900CI C0G
Taiwan Semiconductor Corporation, N-Channel 600V 4.5A (Tc) 50W (Tc) Through Hole ITO-220AB,
View
SIR464DP-T1-GE3
Vishay Siliconix, N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IRFU3910PBF
Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
IRF7811AVTRPBF
Infineon Technologies, N-Channel 30V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IXFN44N50
IXYS, N-Channel 500V 44A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
STU9N60M2
STMicroelectronics, N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
View
RE1C001UNTCL
Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),
View
TSM1NB60CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 1A (Tc) 39W (Tc) Surface Mount TO-252, (D-Pak),
View
IPZA60R120P7XKSA1
Infineon Technologies, N-Channel 600V 26A (Tc) 95W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7
View
RD3S075CNTL1
Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
View
SIHA22N60EF-GE3
Vishay Siliconix, N-Channel 600V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack, EF
View
DMN90H2D2HCTI - Tags