FDB2614
FDB2614
Part Number FDB2614 Description MOSFET N-CH 200V 62A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount D²PAK
To learn about the specification of FDB2614, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB2614 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB2614.
We are offering FDB2614 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDB2614 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB2614 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 62A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27mOhm @ 31A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 99nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V FET Feature - Power Dissipation (Max) 260W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFI630GPBF Vishay Siliconix, N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3,
View
SIRA96DP-T1-GE3 Vishay Siliconix, N-Channel 30V 16A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IPP200N15N3GXKSA1 Infineon Technologies, N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
PMV65UNER Nexperia USA Inc., N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
STP27N60M2-EP STMicroelectronics, N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-220, MDmesh™ M2-EP
View
SI8808DB-T2-E1 Vishay Siliconix, N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
FDD9407L-F085 ON Semiconductor, N-Channel 40V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®
View
TK10A60E,S5X Toshiba Semiconductor and Storage, N-Channel 600V 10A (Ta) 45W (Tc) Through Hole TO-220SIS,
View
SIA462DJ-T1-GE3 Vishay Siliconix, N-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
IRFZ14SPBF Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
View
TK20A60U(Q,M) Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSII
View
VN2460N3-G Microchip Technology, N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-92-3,
View
FDB2614 - Tags
English
