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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB144N12N3 G,IPx147N12N3 G
Standard Package 1000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9660-100A,118
Nexperia USA Inc., N-Channel 100V 26A (Tc) 106W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FQP6N80C
ON Semiconductor, N-Channel 800V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3, QFET®
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STMicroelectronics, N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247, MDmesh™ M2
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IPB025N08N3GATMA1
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IXFB210N30P3
IXYS, N-Channel 300V 210A (Tc) 1890W (Tc) Surface Mount PLUS264™, HiPerFET™, Polar3™
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IRFH5300TRPBF
Infineon Technologies, N-Channel 30V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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IPD60R280CFD7ATMA1
Infineon Technologies, N-Channel 650V 9A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CFD7
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STP10N105K5
STMicroelectronics, N-Channel 1050V 6A (Tc) 130W (Tc) Through Hole TO-220, MDmesh™ K5
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TK33S10N1Z,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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SIDR402DP-T1-GE3
Vishay Siliconix, N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV
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