IPB60R199CPATMA1

Part NumberIPB60R199CPATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB60R199CP
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1520pF @ 100V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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