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LND250K1-G

LND250K1-G

Part NumberLND250K1-G

ManufacturerMicrochip Technology

DescriptionMOSFET N-CH 500V 0.013A SOT23-3

DatasheetLND250

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

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LND250K1-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	LND250
Standard Package	1
Manufacturer	Microchip Technology
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	13mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23 (TO-236AB)
Package / Case	TO-236-3, SC-59, SOT-23-3

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