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IRF200P223

IRF200P223

Part NumberIRF200P223

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 100A TO247AC

DatasheetIRF200P223

Package / CaseTO-247-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 100A (Tc) 313W (Tc) Through Hole TO-247AC

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IRF200P223 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF200P223
Standard Package	400
Manufacturer	Infineon Technologies
Series	StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5094pF @ 50V
FET Feature	-
Power Dissipation (Max)	313W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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