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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SI8812DB-T2-E1
Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
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Nexperia USA Inc., N-Channel 100V 24.8A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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IPD600N25N3GATMA1
Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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RK7002BMHZGT116
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SST3, Automotive, AEC-Q101
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