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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR9N20DPbF, IRFU9N20DPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN6A08KTC
Diodes Incorporated, N-Channel 60V 5.36A (Ta) 2.12W (Ta) Surface Mount TO-252-3,
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PSMN2R0-30YLDX
Nexperia USA Inc., N-Channel 30V 100A (Tc) 142W (Tc) Surface Mount LFPAK56, Power-SO8,
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R6030JNZ4C13
Rohm Semiconductor, N-Channel 600V 30A (Tc) 370W (Tc) Through Hole TO-247G,
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PSMN3R3-80BS,118
Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
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FDS86140
ON Semiconductor, N-Channel 100V 11.2A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®
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VN2110K1-G
Microchip Technology, N-Channel 100V 200mA (Tj) 360mW (Tc) Surface Mount SOT-23-3,
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TK65G10N1,RQ
Toshiba Semiconductor and Storage, N-Channel 100V 65A (Ta) 156W (Tc) Surface Mount D2PAK, U-MOSVIII-H
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DMN2005LPK-7
Diodes Incorporated, N-Channel 20V 440mA (Ta) 450mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
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FQD18N20V2TM
ON Semiconductor, N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-Pak, QFET®
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IRLHS6242TRPBF
Infineon Technologies, N-Channel 20V 10A (Ta), 12A (Tc) 1.98W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2), HEXFET®
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IPN95R2K0P7ATMA1
Infineon Technologies, N-Channel 950V 4A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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IPB80N04S403ATMA1
Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
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