IRLB4030PBF
IRLB4030PBF
Part Number IRLB4030PBF Description MOSFET N-CH 100V 180A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB
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IRLB4030PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLB4030PbF Standard Package 1000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 110A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V FET Feature - Power Dissipation (Max) 370W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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