IRLI640GPBF
IRLI640GPBF
Part Number IRLI640GPBF
Description MOSFET N-CH 200V 9.9A TO220FP
Package / Case TO-220-3 Full Pack, Isolated Tab
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3
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IRLI640GPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLI640G
Standard Package 50
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab
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