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IRLI640GPBF

IRLI640GPBF

Part NumberIRLI640GPBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 9.9A TO220FP

DatasheetIRLI640G

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3

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IRLI640GPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLI640G
Standard Package	50
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3 Full Pack, Isolated Tab

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