Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTG35N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	70A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Power - Max	300W
Switching Energy	840µJ (on), 280µJ (off)
Input Type	Standard
Gate Charge	125nC
Td (on/off) @ 25°C	72ns/132ns
Test Condition	400V, 35A, 10Ohm, 15V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

AUIRG4PH50S	Infineon Technologies, IGBT 1200V 57A 200W Through Hole TO-247AC,	View
RGT40NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 40A 161W Surface Mount LPDS (TO-263S),	View
IRGP30B60KD-EP	Infineon Technologies, IGBT NPT 600V 60A 304W Through Hole TO-247AD,	View
FGAF20N60SMD	ON Semiconductor, IGBT Field Stop 600V 40A 75W Through Hole TO-3PF,	View
IRG4PC40FDPBF	Infineon Technologies, IGBT 600V 49A 160W Through Hole TO-247AC,	View
NGTG15N60S1EG	ON Semiconductor, IGBT NPT 600V 30A 117W Through Hole TO-220,	View
APT35GP120BG	Microsemi Corporation, IGBT PT 1200V 96A 543W Through Hole TO-247 [B], POWER MOS 7®	View
RGPR30BM40HRTL	Rohm Semiconductor, IGBT 430V 30A 125W Surface Mount TO-252, Automotive, AEC-Q101	View
RGPZ10BM40FHTL	Rohm Semiconductor, IGBT 460V 20A 107W Surface Mount TO-252, Automotive, AEC-Q101	View
FGY40T120SMD	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 882W Through Hole TO-247,	View
IRGP20B60PDPBF	Infineon Technologies, IGBT NPT 600V 40A 220W Through Hole TO-247AC,	View
APT45GP120BG	Microsemi Corporation, IGBT PT 1200V 100A 625W Through Hole TO-247 [B], POWER MOS 7®	View

NGTG35N65FL2WG

Part NumberNGTG35N65FL2WG