Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTVX6TS65
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	144A
Current - Collector Pulsed (Icm)	320A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 80A
Power - Max	404W
Switching Energy	2.65mJ (on), 1.8mJ (off)
Input Type	Standard
Gate Charge	171nC
Td (on/off) @ 25°C	45ns/201ns
Test Condition	400V, 80A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

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FGB20N60SFD	ON Semiconductor, IGBT Field Stop 600V 40A 208W Surface Mount D²PAK,	View
HGTG20N60B3	ON Semiconductor, IGBT 600V 40A 165W Through Hole TO-247-3,	View
RGCL60TS60GC11	Rohm Semiconductor, IGBT Trench Field Stop 600V 48A 111W Through Hole TO-247N,	View
RGTH40TK65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 23A 56W Through Hole TO-3PFM,	View
STGWA40H120DF2	STMicroelectronics, IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247-3,	View
IHW50N65R5XKSA1	Infineon Technologies, IGBT 650V 80A 282W Through Hole PG-TO247-3, TrenchStop®	View
FGA25N120ANTDTU	ON Semiconductor, IGBT NPT and Trench 1200V 50A 312W Through Hole TO-3P,	View
SGL160N60UFDTU	ON Semiconductor, IGBT 600V 160A 250W Through Hole TO-264-3,	View
IKW40N120T2FKSA1	Infineon Technologies, IGBT Trench 1200V 75A 480W Through Hole PG-TO247-3, TrenchStop®	View
RGT8NL65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS,	View
IXXH80N65B4H1	IXYS, IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH), GenX4™, XPT™	View

RGTVX6TS65GC11

Part NumberRGTVX6TS65GC11