Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

Part NumberNVD5117PLT4G-VF01

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 61A DPAK

DatasheetNVD5117PL

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK

To learn about the specification of NVD5117PLT4G-VF01, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVD5117PLT4G-VF01 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVD5117PLT4G-VF01.
We are offering NVD5117PLT4G-VF01 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NVD5117PLT4G-VF01 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NVD5117PL
Standard Package	2500
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 25V
FET Feature	-
Power Dissipation (Max)	4.1W (Ta), 118W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

NVD5117PLT4G-VF01 - Related Products

	SPP08P06PHXKSA1	Infineon Technologies, P-Channel 60V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3, SIPMOS®	View
	AO3423	Alpha & Omega Semiconductor Inc., P-Channel 20V 2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	RD3H200SNTL1	Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount TO-252,	View
	IRFD9020PBF	Vishay Siliconix, P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	DMP2123L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	FDS6679AZ	ON Semiconductor, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IRFR6215TRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SSM3J353F,LF	Toshiba Semiconductor and Storage, P-Channel 30V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI	View
	BUK6D120-60PX	Nexperia USA Inc., P-Channel 60V 3A (Ta), 8A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101, TrenchMOS™	View
	IRF9Z34PBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,	View
	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI3483CDV-T1-GE3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View

NVD5117PLT4G-VF01 - Tags

NVD5117PLT4G-VF01 NVD5117PLT4G-VF01 PDF NVD5117PLT4G-VF01 datasheet NVD5117PLT4G-VF01 specification NVD5117PLT4G-VF01 image NVD5117PLT4G-VF01 India Renesas Electronics India NVD5117PLT4G-VF01 buy NVD5117PLT4G-VF01 NVD5117PLT4G-VF01 price NVD5117PLT4G-VF01 distributor NVD5117PLT4G-VF01 supplier NVD5117PLT4G-VF01 wholesales