PMV35EPER
PMV35EPER
Part Number PMV35EPER Description MOSFET P-CH 30V 5.3A TO236AB Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 5.3A (Ta) 480mW (Ta), 1.2W (Tc) Surface Mount TO-236AB
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PMV35EPER - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMV35EPE Standard Package 1 Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 793pF @ 15V FET Feature - Power Dissipation (Max) 480mW (Ta), 1.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3
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