Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2308CDS-T1-GE3

SI2308CDS-T1-GE3

SI2308CDS-T1-GE3

Part NumberSI2308CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 2.6A SOT23-3

DatasheetSI2308CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2308CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308CDS-T1-GE3.
We are offering SI2308CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2308CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2308CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	144mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2308CDS-T1-GE3 - Related Products

	BSC265N10LSFGATMA1	Infineon Technologies, N-Channel 100V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SIE812DF-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View
	STP80NF55-06FP	STMicroelectronics, N-Channel 55V 60A (Tc) 45W (Tc) Through Hole TO-220FP, STripFET™ II	View
	BUK9207-30B,118	Nexperia USA Inc., N-Channel 30V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRFS3206TRRPBF	Infineon Technologies, N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	VN2110K1-G	Microchip Technology, N-Channel 100V 200mA (Tj) 360mW (Tc) Surface Mount SOT-23-3,	View
	VN0104N3-G	Microchip Technology, N-Channel 40V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	SIR182DP-T1-RE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SQP120N06-6M7_GE3	Vishay Siliconix, Through Hole TO-220AB,	View
	SIR872DP-T1-GE3	Vishay Siliconix, N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount, TrenchFET®	View
	SISS70DN-T1-GE3	Vishay Siliconix, N-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	IRLHM630TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount, HEXFET®	View

SI2308CDS-T1-GE3 - Tags

SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 PDF SI2308CDS-T1-GE3 datasheet SI2308CDS-T1-GE3 specification SI2308CDS-T1-GE3 image SI2308CDS-T1-GE3 India Renesas Electronics India SI2308CDS-T1-GE3 buy SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 price SI2308CDS-T1-GE3 distributor SI2308CDS-T1-GE3 supplier SI2308CDS-T1-GE3 wholesales