SI2319CDS-T1-GE3
SI2319CDS-T1-GE3
Part Number SI2319CDS-T1-GE3 Description MOSFET P-CH 40V 4.4A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2319CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319CDS-T1-GE3.
We are offering SI2319CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2319CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2319CDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 77mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 595pF @ 20V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2319CDS-T1-GE3 - Related ProductsMore >>
SI3493DDV-T1-GE3 Vishay Siliconix, P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
IRLML5103TRPBF Infineon Technologies, P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
NTA4151PT1G ON Semiconductor, P-Channel 20V 760mA (Tj) 301mW (Tj) Surface Mount SC-75, SOT-416,
View
SISS27ADN-T1-GE3 Vishay Siliconix, P-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III
View
DMP3028LPSQ-13 Diodes Incorporated, P-Channel 30V 21A (Tc) 1.28W Surface Mount PowerDI5060-8, Automotive, AEC-Q101
View
FQU5P20TU ON Semiconductor, P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®
View
ZXMP6A17GTA Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,
View
FDS4435BZ ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
CSD23382F4T Texas Instruments, P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
SPB18P06PGATMA1 Infineon Technologies, P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB), SIPMOS®
View
SI4101DY-T1-GE3 Vishay Siliconix, P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
RZM002P02T2L Rohm Semiconductor, P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
SI2319CDS-T1-GE3 - Tags
English
