Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2323DDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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PMV33UPE,215	Nexperia USA Inc., P-Channel 20V 4.4A (Ta) 490mW (Ta) Surface Mount TO-236AB,	View
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IRFR9024NTRPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®	View
SI4447DY-T1-GE3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
DMP6050SFG-13	Diodes Incorporated, P-Channel 60V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8,	View
IRF6215STRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, HEXFET®	View
SI2333DS-T1-GE3	Vishay Siliconix, P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
IXTK170P10P	IXYS, P-Channel 100V 170A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™	View
TSM7P06CP ROG	Taiwan Semiconductor Corporation, P-Channel 60V 7A (Tc) 15.6W (Tc) Surface Mount TO-252, (D-Pak),	View

SI2323DDS-T1-GE3

Part NumberSI2323DDS-T1-GE3