Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

Part NumberSI2323DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 5.3A SOT-23

DatasheetSI2323DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23

To learn about the specification of SI2323DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2323DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2323DDS-T1-GE3.
We are offering SI2323DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2323DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2323DDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2323DDS-T1-GE3 - Related Products

	IRF5210PBF	Infineon Technologies, P-Channel 100V 40A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI4835DDY-T1-E3	Vishay Siliconix, P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SISS65DN-T1-GE3	Vishay Siliconix, P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III	View
	IXTQ10P50P	IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-3P, PolarP™	View
	NDT2955	ON Semiconductor, P-Channel 60V 2.5A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	FDMA530PZ	ON Semiconductor, P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	AO3419	Alpha & Omega Semiconductor Inc., P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SI4403CDY-T1-GE3	Vishay Siliconix, P-Channel 20V 13.4A (Tc) 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	AO3415A	Alpha & Omega Semiconductor Inc., P-Channel 20V 5A (Ta) 1.5W (Ta) Surface Mount SOT-23-3L,	View
	SI7613DN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FDS9400A	ON Semiconductor, P-Channel 30V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	DMP3018SFV-7	Diodes Incorporated, P-Channel 30V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX),	View

SI2323DDS-T1-GE3 - Tags

SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 PDF SI2323DDS-T1-GE3 datasheet SI2323DDS-T1-GE3 specification SI2323DDS-T1-GE3 image SI2323DDS-T1-GE3 India Renesas Electronics India SI2323DDS-T1-GE3 buy SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 price SI2323DDS-T1-GE3 distributor SI2323DDS-T1-GE3 supplier SI2323DDS-T1-GE3 wholesales