SI3453DV-T1-GE3
SI3453DV-T1-GE3
Part Number SI3453DV-T1-GE3
Description MOSFET P-CHANNEL 30V 3.4A 6TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 3.4A (Tc) 3W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3453DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3453DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3453DV-T1-GE3.
We are offering SI3453DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3453DV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3453DV
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
SI3453DV-T1-GE3 - Related ProductsMore >>
FDD4141
ON Semiconductor, P-Channel 40V 10.8A (Ta), 50A (Tc) 2.4W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®
View
SSM6J216FE,LF
Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI
View
CSD25213W10
Texas Instruments, P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™
View
SI2365EDS-T1-GE3
Vishay Siliconix, P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®
View
IXTP76P10T
IXYS, P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™
View
DMP1011UCB9-7
Diodes Incorporated, P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9,
View
CSD23285F5T
Texas Instruments, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
RTU002P02T106
Rohm Semiconductor, P-Channel 20V 250mA (Ta) 200mW (Ta) Surface Mount UMT3,
View
CSD25211W1015
Texas Instruments, P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™
View
BSS84PH6433XTMA1
Infineon Technologies, P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
SI2343DS-T1-GE3
Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount, TrenchFET®
View
SSM3J371R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
SI3453DV-T1-GE3 - Tags