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SI7190DP-T1-GE3

SI7190DP-T1-GE3

Part NumberSI7190DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 250V 18.4A PPAK SO-8

DatasheetSI7190DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

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SI7190DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7190DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	118mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2214pF @ 125V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SI7190DP-T1-GE3 - Tags

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