Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA445EDJ-T1-GE3

SIA445EDJ-T1-GE3

SIA445EDJ-T1-GE3

Part NumberSIA445EDJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC-70

DatasheetSiA445EDJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA445EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA445EDJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA445EDJ-T1-GE3.
We are offering SIA445EDJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA445EDJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA445EDJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	16.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2130pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA445EDJ-T1-GE3 - Related Products

	FDZ193P	ON Semiconductor, P-Channel 20V 3A (Ta) 1.9W (Ta) Surface Mount 6-WLCSP (1.0x1.5), PowerTrench®	View
	SQ3469EV-T1_GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SI2333DDS-T1-GE3	Vishay Siliconix, P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	ZXM61P02FTA	Diodes Incorporated, P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	SI3499DV-T1-GE3	Vishay Siliconix, P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, TrenchFET®	View
	SQD40131EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	FQB7P20TM	ON Semiconductor, P-Channel 200V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	DMP4065SQ-7	Diodes Incorporated, P-Channel 40V 2.4A (Ta) 720mW (Ta) Surface Mount SOT-23,	View
	SIS407DN-T1-GE3	Vishay Siliconix, P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMP2045U-7	Diodes Incorporated, P-Channel 20V 4.3A (Ta) 800mW (Ta) Surface Mount SOT-23,	View
	VP2450N8-G	Microchip Technology, P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	SI5471DC-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®	View

SIA445EDJ-T1-GE3 - Tags

SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 PDF SIA445EDJ-T1-GE3 datasheet SIA445EDJ-T1-GE3 specification SIA445EDJ-T1-GE3 image SIA445EDJ-T1-GE3 India Renesas Electronics India SIA445EDJ-T1-GE3 buy SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 price SIA445EDJ-T1-GE3 distributor SIA445EDJ-T1-GE3 supplier SIA445EDJ-T1-GE3 wholesales